Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

A team of over 150 scientists has achieved what once seemed impossible: a complete wiring and activity map of a tiny section ...

The pursuit of accurate temperature characterisation in GaN HEMTs confronts fundamental limitations of existing methodologies ...

Integrated GaN devices in server power supply unit designs enable higher efficiency and power density in data centers.

STMicroelectronics and Innoscience have signed a joint development agreement (JDA) to develop and manufacture gallium nitride on silicon (GaN-on-Si). Under the terms of the agreement, Innoscience will ...

The architecture used for the generator and discriminator is MLP (multi layer perceptron) network. This model is trained with MNIST dataset and finally it can generate images of numbers 0 to 9 ...

The University of Waterloo School of Architecture is a leader in design education and research. Offering a fully cooperative professional program, Waterloo Architecture is the only Canadian school of ...

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...