A Gate Driving Scheme for GaN GIT with Enhanced Short Circuit Capability for Motor Drive Application
Abstract: Short circuit capability in power switching devices is highly desired for motor drive application, and it is a challenging issue for GaN power high-electron-mobility transistor (HEMT) ...
Abstract: A robust sensorless control method requests an accurate rotor position estimation even under open-circuit faults. Thus, a comprehensive high-frequency (HF) square-wave voltage injection ...
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