Researchers at Fraunhofer IAF have developed a GaN transistor technology with a gate length of 70 nm that achieves record ...

Researchers at Fraunhofer IAF have developed a GaN transistor technology with a gate length of 70 nm that achieves record efficiency values under typical satellite conditions. In the future, this ...

Find out how a digital technique performs multiplication on two bitstreams and avoids the cost of the analog multiplier.

The humble inventions that power our modern world wouldn’t have been possible without decades of support for early-stage ...

A breakthrough improves performance and reliability of SiC transistors through novel annealing process using diluted ...

While many research efforts are underway to develop active devices that can function in the challenging terahertz spectrum, ...

A new hydrogel electrolyte enables fast, low-power solid-state circuits for implantable bioelectronics, offering high precision, stability, and compatibility with complex neural systems.

This FAQ examines how stray inductances in components and PCB layouts create voltage overshoots, electromagnetic interference ...

Researchers at The University of Osaka have developed a novel technique to enhance the performance and reliability of silicon ...

Researchers at The University of Osaka have developed a novel technique to enhance the performance and reliability of silicon ...

Abstract: The gate conduction mechanisms in p-gallium nitride (GaN)/AlGaN/GaN enhancement mode transistors are investigated using temperature-dependent dc gate current measurements. In each of the ...

The capacitance boost using HZO stack was originally tailored for silicon devices in Sayeef Salahuddin’s lab at UC Berkeley EECS. Drawing inspiration from prior work, the team—led by Asir Khan and ...