The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride.
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Plasma technique doubles etch rate for 3D NAND flash memoryTo store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be ...
To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...
Another chemical compound the researchers studied was ammonium fluorosilicate, which forms during the etching process when the silicon nitride reacts with the hydrogen fluoride. The research ...
To store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be studied in greater detail. By ...
Although nitrate is the main form in which nitrogen occurs in groundwater, dissolved nitrogen also occurs in the form of ammonium (NH4 ... iron, fluoride and uranium. Just as 19.8% samples ...
Soil effective phosphorus is determined by combined leaching of ammonium fluoride-hydrochloric acid solution and sodium bicarbonate solution, followed by molybdenum antimony antimony colourimetric ...
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