Abstract: A simple equation RF MOS FET model using hyperbolic tangent functions and its parameter extraction technique have been demonstrated. Only twenty parameters are required without physical ...
Abstract: We have developed an enhancement-mode GaN-on-Si MOS-FET with a thin GaN channel (40nm) on a thick AlGaN back barrier layer (1um), using Au-free 150-mm Si process. The developed device showed ...
This paper presents a current sensing principle appropriate for use in power electronics' converters. This current measurement principle has been developed for metal oxide semiconductor field effect ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback