Tiny molecules that can think, remember, and learn may be the missing link between electronics and the brain. For more than ...
Abstract: This paper reports on the use of TCAD for thermal simulation of GaN-on-SiC HEMT RF power transistors. Firstly, the results are compared with those obtained using ANSYS Mechanical Pro, then ...
Abstract: Single Event Effect of GaN HEMT devices is usually done using the same testing conditions as the one developed and validated a long time ago for MOSFETs components. This paper presents two ...
Intel has completed acceptance testing of the industry's first commercial high-NA EUV lithography system with a numerical aperture of 0.55, the ASML Twinscan EXE:5200B, laying the foundation for mass ...