These similar power-measurement ICs tackle the often necessary but energy-consuming task of continuous power measurement and ...
An SCR topology transmogrifies into BJT two-wire precision current source with a self-resetting fault-current limiter.
When classic 2D scaling dominated, the industry’s center of gravity was disinflationary: Chip average selling prices (ASPs) trended lower, and wafer fab equipment (WFE) growth was intermittent. In ...
Abstract: This study aimed to evaluate the reliability of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) under extremely high gate voltage stress. The research ...
Nanowires are structures with a width and depth of a few nanometres or less, but a much longer length. Electrons in these materials are free to travel along the wire, but their motion in the other two ...
The art of creating nanoscale semiconductor devices has been one of the most advanced technologies for almost half a century. Metal–oxide–semiconductor field‐effect transistor (MOSFET)‐based digital ...
ROHM has begun mass production of the SCT40xxDLL series of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFET)s in TOLL (TO-Leadless) packages. Compared to conventional ...
Electrical and Computer Engineering at Michigan Tech prepares our students to tackle tomorrow’s challenges in robotics, automation, artificial intelligence, machine learning, alternative energy, and ...
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