Scientists discovered a new Hall effect driven by spin currents in noncollinear antiferromagnets, offering a path to more ...

FREMONT, Calif. – August 12, 2020 - Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced a new solution that will significantly improve the capabilities of ...

Spintronics researchers discovered a new mechanism to generate strong spin currents that could bring us a step closer to ...

This unique spin texture enables a fresh take on the Hall effect, where spin currents can ... based storage (Magnetoresistive ...

This phosphorus doped silicon chip was used to demonstrate the electrically accessible nuclear spin memory. Commercially obtained silicon, as found in conventional electronic devices, was used.

making it a promising alternative to conventional memory technologies. Spin valves have revolutionized the data storage industry by enabling the development of high-sensitivity read heads for HDDs.

Spin-transfer-torque magnetic random access memory (STT-MRAM) — the most advanced of these emerging technologies for solid-state non-volatile memory — is about to hit the market. This Nature ...

FREMONT, Calif.-- November 12, 2018 -- Spin Memory, Inc., the leading MRAM developer formerly known as Spin Transfer Technologies, Inc., today announced its $52 million Series B funding round. This ...