Abstract: In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a 3 nm Al2 ...
Your browser does not support the audio element. Data is everything. In our increasingly digitalized world, the greatest currency is data. There was gold, then oil ...
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