Integrated GaN devices in server power supply unit designs enable higher efficiency and power density in data centers.

Figure 2: A block diagram of the SoniC board shows the NCP4390 PFM controller on the secondary side. In implementing wide-bandgap semiconductor technology to produce space and weight savings, ...

Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

The pursuit of accurate temperature characterisation in GaN HEMTs confronts fundamental limitations of existing methodologies ...

From a tiny sample of tissue no larger than a grain of sand, scientists have come within reach of a goal once thought ...