Abstract: In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a 3 nm Al2 ...
Abstract: The back-end-of-line (BEOL) process compatibility is one of the advantages of Hf0.5Zr0.5O2 (HZO)-based ferroelectric (FE) among other kinds of HfO2-doped FEs. However, the impact of stress ...
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