Nature

Negative Capacitance Field-Effect Transistors and Ferroelectric Materials

Negative capacitance field-effect transistors (NCFETs) represent a transformative approach in the design of low-power electronic devices. By integrating ferroelectric materials into the gate structure ...
AZOM

Tunnel Field-Effect Transistors for the Future of Low-Power Electronics

With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...
Semiconductor Engineering

SiGeSn SBFETs at Cryogenic Temperatures (Tu Wien et al)

A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, ...

Mitsubishi Electric to Ship Samples of Four New Trench SiC-MOSFET Bare Dies for Power Semiconductors

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect ...
EurekAlert!

Universal amplification-free RNA detection with CRISPR-Cas10 and graphene field-effect transistors

A collaborative biosensing system is developed for amplification-free RNA/miRNA detection by integrating Type III CRISPR-Cas10 system with a graphene field-effect transistor (GFET). Continuous ...
Semiconductor Engineering

2D Ferroelectric Field-Effect Transistors (Penn State, U. of Minnesota)

A new technical paper titled “Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO 3 nanomembranes at sub-ambient temperatures” was published by researchers at Penn ...