This technical article gives you information on the advantages of Silicon Carbide Schottky Diodes over Silicon Rectifiers and how Silicon Rectifiers can compete with SiC Diodes. It also explains why ...
The paper represents the electrical behaviour of a new Gallium Arsenide (GaAs) power Schottky Diode compared to the bipolar silicon diodes. The paper also introduces its electrical measurements ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
A new diode looks set to steal the humble LED's thunder. Dubbed a diode for light, and crafted using standard silicon chip fabrication techniques, this is a key discovery that will pave the path to ...
America Semiconductor, LLC announced the release of its SD51 silicon power Schottky diodes. The DO-5 stud-mount parts feature a continuous forward current of 60 A, and repetitive peak reverse voltage ...
TOKYO--(BUSINESS WIRE)--Toshiba Corporation’s (TOKYO: 6502) Semiconductor & Storage Products Company today announced that it will expand its family of 650V silicon carbide (SiC) schottky barrier ...
Infineon Technologies AG introduced its third generation thinQ!(tm) SiC Schottky diodes. Featuring the industry's lowest device capacitance for any given current rating, which enhances overall system ...
In the realm of modern electronics, semiconductor diodes have emerged as fundamental components with diverse applications. One of their pivotal roles lies in the fields of rectification and voltage ...
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