This RF MOSFET driver development board features DVRF615D615X2 development board. It is a general-purpose board designed to simplify the evaluation of the gate driver and provide a building block for ...
IXYS introduces IXRFD615 device as the new high-speed, high-current gate driver that is specifically designed to drive MOSFETs in Class D and E RF applications. It is in low-inductance surface mount ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its new 6.5W silicon radio-frequency (RF) high-power metal-oxide ...
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental building block of modern electronics. It is a field-effect transistor (FET) where the voltage applied to a terminal (gate) ...
As wireless technology evolves into higher frequencies, many applications are demanding higher isolation performance. To satisfy this need, Peregrine Semiconductor has announced a high-isolation, SPST ...
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