Samsung 900-layer NAND prototype — the world’s first — uses Cell Multi-Bonding to fuse two 450-layer wafers into one chip, ...

NAND flash memory has become the preferred nonvolatile data storage solution for portable consumer electronic devices due to its reliability and cost/performance advantages. For a growing number of ...

Intel Corporation and Micron Technology, Inc. has introduced the industry’s first sub-40 nanometer (nm) NAND memory device, unveiling a 34nm 32 gigabit (Gb) multi-level cell chip. This process ...

Walking through the corridors of the Nangang Exhibition Center during Computex Taipei, the atmosphere is heavy with the scent of ozone and the hum of high-performance hardware. Engineers from across ...

Old camera tech has been employed to form a 3D hybrid of NAND and DRAM tech using IGZO instead of silicon.

The key technical differences between JESD230G and earlier revisions of the NAND Flash Interoperability Standard. How the new Separate Command Address (SCA) Protocol improves performance by ...

SK Hynix Inc. (or "the company") announced today that it has developed a UFS 4.1 solution product adopting the world's highest 321-layer 1Tb triple-level cell 4D NAND flash for mobile applications.

Intel and Micron Technology are forming a new company to manufacture NAND flash memory chips, the two companies announced Monday. By combining their manufacturing technologies and expertise, Intel and ...

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Memory chip costs are up as AI companies gobble up the hot commodity. Consumer electronics companies like Dell and HP are ...

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