If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...
Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...
Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...
The shielded-gate MOSFET can now provide the answer for designers of dc/dc power supplies in the 40 to 200-V range Regulatory bodies as well as end customers find themselves striving for higher ...
LEIDEN, Netherlands and MILPITAS, Calif., July 20, 2017 (GLOBE NEWSWIRE) -- IXYS Corporation (NASDAQ:IXYS), a global manufacturer of power semiconductors and integrated circuits (ICs) for energy ...
KAWASAKI, Japan, May 21, 2026--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") today started shipping test samples of "TW007D120E," a 1200V trench-gate SiC MOSFET ...
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers Toshiba Electronic Devices & Storage Corporation ("Toshiba") today ...
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